<?xml version="1.0" encoding="UTF-8"?>
<feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
<title>Physics</title>
<link href="http://irgu.unigoa.ac.in/drs/handle/unigoa/28" rel="alternate"/>
<subtitle/>
<id>http://irgu.unigoa.ac.in/drs/handle/unigoa/28</id>
<updated>2026-10-30T07:32:21Z</updated>
<dc:date>2026-10-30T07:32:21Z</dc:date>
<entry>
<title>Understanding the role of Z atom in influencing martensitic transformation in Ni-Mn-Z (Z = Ga, In, Sn, Sb) Heusler alloys</title>
<link href="http://irgu.unigoa.ac.in/drs/handle/unigoa/8111" rel="alternate"/>
<author>
<name>Bhlos, Nafea Manea</name>
</author>
<id>http://irgu.unigoa.ac.in/drs/handle/unigoa/8111</id>
<updated>2026-10-16T06:36:24Z</updated>
<published>2025-10-01T00:00:00Z</published>
<summary type="text">Understanding the role of Z atom in influencing martensitic transformation in Ni-Mn-Z (Z = Ga, In, Sn, Sb) Heusler alloys
Bhlos, Nafea Manea
</summary>
<dc:date>2025-10-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>A review on rare earth ions-doped tellurite glasses for photon up-conversion: Advances and applications</title>
<link href="http://irgu.unigoa.ac.in/drs/handle/unigoa/8109" rel="alternate"/>
<author>
<name>S. D'Souza</name>
</author>
<author>
<name>Raut-Dessai, R.</name>
</author>
<id>http://irgu.unigoa.ac.in/drs/handle/unigoa/8109</id>
<updated>2026-10-16T06:15:53Z</updated>
<published>2026-01-01T00:00:00Z</published>
<summary type="text">A review on rare earth ions-doped tellurite glasses for photon up-conversion: Advances and applications
S. D'Souza; Raut-Dessai, R.
Photon up-conversion in tellurite glass exhibits a strong NIR emission and has achieved significant success in the field of photonics. Herein, the review offers an overview of quantitative and qualitative studies on the up-conversion phenomenon in tellurite-based glasses. Rare-earth ion doped tellurite glasses have emerged as one of the most versatile glassy platforms in modern photonics owing to their unique combination of low phonon energy, extended infrared transparency, high refractive index, significant rare-earth ion solubility, and exceptional nonlinear optical response. The review provides a comprehensive overview of the underlying mechanisms governing up-conversion, with emphasis on energy-transfer up-conversion pathways to correlate emission behaviour with host composition. The novelty in this system is its high rare-earth-ion solubility, which enables incorporating multiple rare-earth ions and efficient co-doping strategies to tailor up-conversion properties. Here we have identified three key factors governing photon up-conversion in Er sup(3+0, Ho sup(3+), Tm sup(3+), Dy sup(3+) and Sm sup(3+) ions doped/co-doped tellurite glass systems: hydroxyl group-induced concentration quenching, excitation wavelength and the up-conversion emission. The up-conversion properties and Judd-Ofelt parameters (omega2, omega4, omega6) were systematically compared for a common host matrix while varying the rare-earth dopant. Moreover, the review also highlights the current state-of-the-art application and the roadmap for optimizing rare-earth ions doped tellurite glasses towards next generation photonic applications and quantum technologies.
</summary>
<dc:date>2026-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Exploring Solid Electrolytes for Electrochemical Energy Devices: Properties and Mechanisms Governing Ion Conduction</title>
<link href="http://irgu.unigoa.ac.in/drs/handle/unigoa/8101" rel="alternate"/>
<author>
<name>Karmalkar, Diksha N.</name>
</author>
<id>http://irgu.unigoa.ac.in/drs/handle/unigoa/8101</id>
<updated>2026-10-16T05:44:32Z</updated>
<published>2026-05-01T00:00:00Z</published>
<summary type="text">Exploring Solid Electrolytes for Electrochemical Energy Devices: Properties and Mechanisms Governing Ion Conduction
Karmalkar, Diksha N.
</summary>
<dc:date>2026-05-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Moisture detection at ppm level by anodic aluminum oxide thin film capacitive sensor</title>
<link href="http://irgu.unigoa.ac.in/drs/handle/unigoa/8069" rel="alternate"/>
<author>
<name>Dehkordi, N.H.</name>
</author>
<author>
<name>Phadte, N.</name>
</author>
<author>
<name>Ghara, D.</name>
</author>
<author>
<name>Mondal, P.</name>
</author>
<author>
<name>Hyam, R.S.</name>
</author>
<id>http://irgu.unigoa.ac.in/drs/handle/unigoa/8069</id>
<updated>2026-10-12T06:27:28Z</updated>
<published>2026-01-01T00:00:00Z</published>
<summary type="text">Moisture detection at ppm level by anodic aluminum oxide thin film capacitive sensor
Dehkordi, N.H.; Phadte, N.; Ghara, D.; Mondal, P.; Hyam, R.S.
In the present investigation, the fabrication of nanoporous anodic aluminum oxide (AAO) thin films via a one-step and two-step anodization process was carried out. It utilizes a binder-free method to form nanostructured AAO films on aluminum foil surface. The impact of anodization conditions on the pore structure was examined using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). The bulk porosity and surface hydrophilicity of the AAO films were evaluated using Brunauer-Emmett-Teller (BET) analysis and contact angle measurements. The nanoporous AAO film synthesized via one-step anodization exhibited comparatively higher bulk porosity (42 percent), smaller average pore diameter (37.0 plus-minus 2.3 nm), and superior hydrophilic contact angle of 84.2 degrees. These morphological characteristics directly enhanced water adsorption and capillary condensation within the nanopores. To evaluate the functional response of the porous network, Ag/AAO/Al capacitive structures were tested for low-ppm moisture sensing (20-127 ppm). The device based on one-step AAO exhibited a linear response (R sup(2) = 0.9950), with response and recovery times of 305 s and 31 s, respectively, which is much better compared to two-step AAO samples. These results demonstrate that the controlled tailoring of the AAO morphology enables tunable adsorption properties, supporting its application in porous sensing platforms and moisture-sensitive devices.
</summary>
<dc:date>2026-01-01T00:00:00Z</dc:date>
</entry>
</feed>
