Location of trivalent lanthanide dopant energy levels in (Lu0.5Gd0.5)(2)O-3

dc.contributor.author	Retot, H.
dc.contributor.author	Bessiere, A.
dc.contributor.author	Viana, B.
dc.contributor.author	Galtayries, A.
dc.date.accessioned	2015-06-04T03:16:21Z
dc.date.available	2015-06-04T03:16:21Z
dc.date.issued	2011
dc.identifier.citation	Journal of Applied Physics. 109(12); 2011; Article ID: 123518.	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3597788
dc.identifier.uri	http://irgu.unigoa.ac.in/drs/handle/unigoa/2661
dc.description.abstract	The location of Ln(3+) dopant energy levels relative to bands in (Lu0.5Gd0.5)(2)O-3 was studied. A several-steps analysis of XPS measurements on heavy lanthanides sesquioxides Ln(2)O(3) (Ln = Gd, Tb, Dy, Er, Tm, Yb, Lu) and on Sc2O3 and Y2O3 reference materials were used to locate Ln(3+) dopant ground state relative to the top of the valence band in (Lu0.5Gd0.5)(2)O-3 within an error bar of +/-0.4 eV. The agreement between XPS data and model was found improved relative to previous studies. When compared to XPS analysis, prediction based on optical absorption shows a slight underestimation attributed to the lack of precision in Ce4+ charge transfer band measurement.	en_US
dc.publisher	American Institute of Physics (AIP)	en_US
dc.subject	Physics	en_US
dc.title	Location of trivalent lanthanide dopant energy levels in (Lu0.5Gd0.5)(2)O-3	en_US
dc.type	Journal article	en_US
dc.identifier.impf	y