Magnetoresistance study of CeSi(2-x)Ga(x)

dc.contributor.author	Priolkar, K.R.
dc.contributor.author	Rawat, R.
dc.contributor.author	Das, I.
dc.contributor.author	Sarode, P.R.
dc.contributor.author	Prabhu, R.B.
dc.date.accessioned	2015-06-03T05:22:39Z
dc.date.available	2015-06-03T05:22:39Z
dc.date.issued	2002
dc.identifier.citation	Solid State Physics (India), Ed. by: S.L. Chaplot, P.S.R. Krishna and T. Sakuntala. Narosa Publishing House, New Delhi. 44; 2002; 433-434.	en_US
dc.identifier.uri	http://irgu.unigoa.ac.in/drs/handle/unigoa/303
dc.description.abstract	Magnetoresistance measurements on CeSi(2-x),Ga(x), x = 0.7, 1.0 and 1.3 were carried out in the temperature range 3K-125K and in fields upto 80 kOe. The data gives a dear evidence of competition between Kondo and RKKY interactions as the temperature is lowered in these ferromagnetic Kondo systems. As the Ga concentration is increased the Kondo interaction strengthen at the expense of magnetic interactions which is consistent with Doniach's diagram. This has been interpreted as an electronically driven volume transition as a function of Ga doping.
dc.publisher	Narosa Publishing House, New Delhi	en_US
dc.subject	Physics	en_US
dc.title	Magnetoresistance study of CeSi(2-x)Ga(x)	en_US
dc.type	Conference article	en_US