Optoelectronic Analysis of CdGa2X4 (X= S, Se): A Promising Material for Solar Cells

Abstract

the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.