Abstract:
In the present work pristine and transition metal (Co, Cr) doped indium oxide nanoparicles are prepared by combustion method using glycine as a fuel. The initial precursors were characterised by TG/DSC which shows the stepwise weight loss of the precursor. FTIR measurements showed the absence of organic impurity in final compounds. X-Ray diffraction studies reveal that In2O3 crystallizes in a cubic bixbyte structure. As seen from the TEM images particle size obtained is greater than 20 nm. Temperature dependent electrical resistivity measurement shows a semiconducting behaviour. Decrease in resistivity obtained upon doping can be attributed to the decrease in charge carrier mobility.
