On the use of a silicon crystal in a cauchois-type bent crystal x-ray spectrograph

dc.contributor.author	Deshpande, S.D.
dc.contributor.author	Moghe, N.V.
dc.contributor.author	Sapre, V.B.
dc.contributor.author	Mande, C.
dc.date.accessioned	2015-06-03T05:22:40Z
dc.date.available	2015-06-03T05:22:40Z
dc.date.issued	1990
dc.identifier.citation	Measurement Science and Technology. 1(11); 1990; 1250-1253.	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0957-0233/1/11/020
dc.identifier.uri	http://irgu.unigoa.ac.in/drs/handle/unigoa/308
dc.description.abstract	The authors have studied the copper K absorption discontinuity in the metal and its oxides using a Cauchois-type bent crystal x-ray spectrograph equipped with a silicon crystal, along with a conventional x-ray source. The performance of the silicon crystal, which has been used for the first time in the Cauchois geometry in this study, is discussed.
dc.publisher	IOP Publishing	en_US
dc.subject	Physics	en_US
dc.title	On the use of a silicon crystal in a cauchois-type bent crystal x-ray spectrograph	en_US
dc.type	Journal article	en_US
dc.identifier.impf	y