Exploring the electronic and optical properties of AgInO(2)

dc.contributor.author	Bhamu, K.C.
dc.contributor.author	Priolkar, K.R.
dc.date.accessioned	2016-05-16T07:09:28Z
dc.date.available	2016-05-16T07:09:28Z
dc.date.issued	2016
dc.identifier.citation	International Conference on Condensed Matter and Applied Physics (ICC 2015). Bikaner, India. 30-31 Oct 2015.. AIP Conf. Proc. 1728; 2016; vp.	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4946480
dc.identifier.uri	http://irgu.unigoa.ac.in/drs/handle/unigoa/4352
dc.description.abstract	We computed the energy band and density of states for electronic properties while for optical properties we computed dielectric function, absorption coefficient, optical conductivity and refractive index. The origin of energy bands is interpreted in terms of density of states. The electronic transitions in energy bands are explained from frequency dependent dielectric constant. Our computed band structure predicts AgInO(2) as indirect band gap semiconductor while from optical properties we have predicted importance of AgInO(2) in photovoltaic applications. We also reported valence charge density for this compound. Our computed results are in better agreement with available experimental data than those of earlier theoretically reported.	en_US
dc.publisher	AIP	en_US
dc.subject	Physics	en_US
dc.title	Exploring the electronic and optical properties of AgInO(2)	en_US
dc.type	Conference article	en_US