Abstract:
We computed the energy band and density of states for electronic properties while for optical properties we computed dielectric function, absorption coefficient, optical conductivity and refractive index. The origin of energy bands is interpreted in terms of density of states. The electronic transitions in energy bands are explained from frequency dependent dielectric constant. Our computed band structure predicts AgInO(2) as indirect band gap semiconductor while from optical properties we have predicted importance of AgInO(2) in photovoltaic applications. We also reported valence charge density for this compound. Our computed results are in better agreement with available experimental data than those of earlier theoretically reported.
