Abstract:
The atomically thin sheets of Sb sub(2)Se sub(3) hold a great potential in semiconductor applications. The present work reports intercalant-assisted exfoliation methods using various types of intercalants for the preparation of Sb sub(2)Se sub(3) thin layers. Bulk Sb sub(2)Se sub(3) was intercalated with H sub(2)O, PVP, Na sup(+) and Li sup(+) and thereby exfoliated ultrasonically. The structural analysis indicated the absence of certain planes in exfoliated samples, whereas the Raman analysis illustrated a distinct layer-dependent Raman shifts of vibrational modes. The bulk and exfoliated samples, when exposed electrochemically to H sup(+) and K sup(+) ions exhibited unique redox activity, which was correlated to the thickness of the exfoliated layers. The intercalating ability of intercalants was compared to the degree of exfoliation and found to be highest for ionic intercalants.
